Vishay Intertechnology, Inc. ($VSH) Will Trade Ex-Dividend Tomorrow, September 10, 2020

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Vishay Intertechnology, Inc. (NYSE:VSH) will begin trading ex-dividend on September 10, 2020. The quarterly dividend payment of $ 0.095 per share is scheduled to be paid on September 24, 2020. The dividend yield based on the latest trading day closing price was 2.46 %. Owners of shares, purchased before the ex-dividend date will be eligible for the dividend.

Dividends History
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Click Here For More Historical Dividends Of Vishay Intertechnology, Inc.

Vishay Intertechnology, Inc. recently reported second quarter financial results on August 4, 2020, before market open, the Malvern based company communicated income for the second quarter of $ 0.18 per share, from the revenue of $ 581.72 million. The quarterly earnings contracted 50.00 percent while revenues down 15.11 percent compared with the same quarter last year.
The consensus estimates are income of $ 0.07 per share from $ 561.20 million in revenue. The bottom line results beat street analysts by $ 0.11 or 157.14 percent, at the same time, top line results outshined analysts by $ 20.52 million or 3.66 percent.

Stock Performance

Shares of Vishay Intertechnology, Inc. traded low $ -0.67 or -4.16 percent on Tuesday, reaching $ 15.43 with volume of 931.60 thousand shares. Vishay Intertechnology, Inc. has traded high as $ 15.92 and has cracked $ 15.41 on the downward trend

According to the previous trading day, closing price of $ 15.43, representing a 43.37 % increase from the 52 week low of $ 11.23 and a 30.75 % decrease over the 52 week high of $ 23.25.

The company has a market capital of $ 2.23 billion and is part of the Technology sector and Semiconductors industry.

Vishay Intertechnology, Inc. manufactures and supplies discrete semiconductors and passive components in the United States, Europe, and Asia. The Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) segment offers low- and medium-voltage TrenchFET MOSFETs, high-voltage planar MOSFETs, high voltage super junction MOSFETs, power integrated circuits, and integrated function power devices.